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Title: Initial-boundary value problems describing mobile carrier transport in semiconductor devices (English)
Author: Gröger, Konrad
Language: English
Journal: Commentationes Mathematicae Universitatis Carolinae
ISSN: 0010-2628 (print)
ISSN: 1213-7243 (online)
Volume: 26
Issue: 1
Year: 1985
Pages: 75-89
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Category: math
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MSC: 35B40
MSC: 35D05
MSC: 35Q20
MSC: 35Q99
MSC: 82A99
idZBL: Zbl 0581.35069
idMR: MR797294
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Date available: 2008-06-05T21:20:18Z
Last updated: 2012-04-28
Stable URL: http://hdl.handle.net/10338.dmlcz/106348
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Reference: [2] H. ELSCHNER A. MÖSCHWITZER A. REIBIGER: Reehnergestützte Analyse in der Elektronik.Verlag Technik Berlin 1977.
Reference: [3] W. FICHTNER D. ROSE (Ed.): .IEEE Trans. Electron Devices ED-30 (1983).
Reference: [4] H. GAJEWSKI: On existence, uniqueness and asymptotic behavior of solutions of the basic equations for carrier transport in semiconductors.Zeitschr. Angew. Math. Mech., to appear. Zbl 0579.35016, MR 0841263
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Reference: [6] H. GAJEWSKI: On uniqueness, stability and construction of steady state carrier distributions in semiconductors.to appear.
Reference: [7] H. GAJEWSKI K. GRÖGER: On the basic equations for carrier transport in semiconductors.submitted to J. Math. Anal. Appl. MR 0826656
Reference: [8] B. V. GOKHALE: Numerical solutions for a one-dimensional silicon p-n-p transistor.IEEE Trans. Electron Devices ED-17 (1970), 594-602.
Reference: [9] P. GRISVARD: Behavior of the solutions of an elliptic boundary value problem in a polygonal or polyhedral domain.In: numerical solution of partial differential equations III (1976), 207-274. Zbl 0361.35022, MR 0466912
Reference: [10] K. GRÖGER: Asymptotic behavior of solutions to a class of diffusion-reaction equations.Math. Nachr. 112 (1983), 19-33. MR 0726851
Reference: [11] P. HORN R. JACKSON: General mass action kinetics.Arch. Rat. Mech. Anal. 47 (1972), 81-116. MR 0400923
Reference: [12] M. S. MOCK: On equations describing steady-state carrier distributions in a semiconductor device.Comm. Pure Appl. Math. 25 (1972), 781-792. MR 0323233
Reference: [13] M. S. MOCK: An initial value problem from semiconductor device theory.SIAM J. Math. Anal. 5 (1974), 597-612. Zbl 0254.35020, MR 0417573
Reference: [14] M. S. MOCK: Asymptotic behavior of solutions of transport equations for semiconductor devices.J. Math. Anal. Appl. 49 (1975), 215-225. Zbl 0298.35033, MR 0355383
Reference: [15] M. S. MOCK: Analysis of mathematical models of semiconductor devices.Boole Press Dublin 1983. Zbl 0532.65081, MR 0697094
Reference: [16] J. MOSER: A new proof of De Giorgi's theorem concerning the regularity problem for elliptic differential equations.Comm. Pure Appl. Math. 13 (1960), 457-468. Zbl 0111.09301, MR 0170091
Reference: [17] W. van ROOSBROECK: Theory of flow of electrons and holes in germanium and other semiconductors.Bell Syst. Tech. J. 29 (1950), 560-607.
Reference: [18] T. I. SEIDMAN: Steady state solutions of diffusion-reaction systems with electrostatic convection.Nonlinear Analysis 4 (1980), 623-637. Zbl 0438.35030, MR 0574378
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