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Article

Borevich, E. Z. ; Chistyakov, V. M.
Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices. (English). Applications of Mathematics, vol. 46 (2001), issue 5, pp. 383-400
MSC: 35B35, 35B40, 35D05, 35F20, 35Q20, 82D37 | MR 1925194 | Zbl 1059.35026 | DOI: 10.1023/A:1013708427592
Keywords:
nonlinear boundary value problem; asymptotic behaviour of solutions; semiconductors; carrier transport; constant densities of ionized impurities; interior transition layer phenomena
Summary:
The present paper describes mobile carrier transport in semiconductor devices with constant densities of ionized impurities. For this purpose we use one-dimensional partial differential equations. The work gives the proofs of global existence of solutions of systems of such kind, their bifurcations and their stability under the corresponding assumptions.
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